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1 article(s) from Tajarrod, Mohammad Hadi

High I_on/I_off current ratio graphene field effect transistor: the role of line defect

Mohammad Hadi Tajarrod and
Hassan Rasooli Saghai

Beilstein J. Nanotechnol. 2015, 6, 2062–2068, doi:10.3762/bjnano.6.210

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Figure 1: (a) Schematic sketch of a simulated GNRFET with an extended line defect in the center of the channe...

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Figure 2: (a) Comparison between average transmission probabilities as a function of the energy in 1.8 × 20 n...

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Figure 3: Channel length dependence of (a) on-current (b) off current (c) on/off current. The lines are a gui...

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Figure 4: Comparison between average of (a) transconductance and (b) subthreshold swing of ELD-GNRFET and GNR...

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Figure 5: Channel width dependence of (a) on-current (b) off current (c) on/off current. The lines are a guid...

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Figure 6: Comparison between average of (a) transconductance and (b) subthreshold swing of ELD-GNRFET and GNR...

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Full Research Paper

Published 23 Oct 2015

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High Ion/Ioff current ratio graphene field effect transistor: the role of line defect

High I_on/I_off current ratio graphene field effect transistor: the role of line defect